IRF630 Transistor - N-MOSFET 200V 5,7A 75W (TO220)
Varenr:
H15096
EAN:
5410329253387
Tekniske detaljer:
- Producent (varemærke): STMicroelectronics
- Type transistor: N-MOSFET
- Teknologi: MESH OVERLAY II
- Polarisering: unipolær
- Drain-source spænding (VDS): 200V
- Kontinuerlig dræinstrøm (ID): 5,7A
- Effektafledning (Pd): 75W
- Hus: TO220-3
- Gate-source spænding (Vgs): ±20V
- On-state modstand: 400mOhm
- Montering: Printhul
- Type kanal: Forbedret
- Funktioner ved halvlederenheder: ESD-beskyttet gate
Specifications:
- Manufacturer: STMicroelectronics
- Type of transistor: N-MOSFET
- Technology: MESH OVERLAY II
- Polarisation: Unipolar
- Drain-source voltage: 200V
- Drain current: 5.7A
- Power dissipation: 75W
- Case: TO220-3
- Gate-source voltage: ±20V
- On-state resistance: 400mΩ
- Mounting: THT
- Kind of channel: Enhanced
- Features of semiconductor devices: ESD protected gate
