STGP6NC60HD IGBT Transistor - 600V 15A 56W (TO220)
Varenr:
H54078
EAN:
5705412540780
STGP6NC60HD er en meget hurtig N-kanal PowerMESH IGBT til brug med SMPS og PFC i både hard switch og resonant topologi. Ved hjælp af den nyeste højspændingsteknologi baseret på et patenteret strimmellayout har STMicroelectronics designet en avanceret familie af IGBT'er, PowerMESH IGBT med enestående ydeevne. Suffikset H identificerer en familie, der er optimeret til højfrekvensapplikationer for at opnå meget høje koblingsydelser (reduceret tfall) ved at opretholde et lavt spændingsfald.
Egenskaber:
- Lavt spændingsfald (Vcesat)
- Lavt CRES/CIES-forhold (ingen krydsledningsfølsomhed)
- Meget blød ultrahurtig genopretning anti-parallel diode
- Højfrekvent drift
Tekniske detaljer:
- Producent: STMicroelectronics
- Collector Emitter spænding: 600V
- Collector strøm: 15A
- Effektafledning (PD): 56W
- Gate-emitter spænding: ±20V
- Driftstemperatur Max: 150°C
The STGP6NC60HD is a very fast N-channel PowerMESH IGBT for use with SMPS and PFC in both hard switch and resonant topologies. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBT with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.
Features:
- Low on voltage drop (Vcesat)
- Low CRES/CIES ratio (no cross-conduction susceptibility)
- Very soft ultrafast recovery anti-parallel diode
- High frequency operation
Specifications:
- Manufacturer: STMicroelectronics
- Collector Emitter Voltage Max: 600V
- Continuous Collector Current: 15A
- Power Dissipation: 56W
- Gate-emitter voltage: ±20V
- Operating Temperature Max: 150°C
